Albert-Marcel Schrotz
M. Sc. Albert-Marcel Schrotz, Akad. Rat
Department of Electrical-Electronic-Communication Engineering
Chair of Electronics (Prof. Dr. Weigel)
Cauerstraße 9
91058 Erlangen
- Phone number: +49 9131 85-27193
- Fax number: +49 9131 85-28730
- Email: albert-marcel.schrotz@fau.de
- Website: http://www.lfte.de
Bio
Albert-M. Schrotz successfully completed his studies in Mechatronics (B.Sc.) and Electrical Engineering, Electronics and Information Technology at FAU Erlangen-Nuremberg in March 2019 with a Master of Science (M. Sc.) degree. Since May 2019, he has been a research assistant at the Chair of Technical Electronics in the RFMXIS group. Since February 2021, he has been team leader of the MXIS team, which has been operating as an independent group since July 2022. Since July 2022 he is group leader of the Mixed-Signal-Integrated-Systems (MXIS) group.
Areas of Interest
- RF Chipdesign (upto 325 GHz)
- RF System Engineering
- ADC/DAC Design
- FPGAs
Publications
- Breun, S., Schrotz, A.-M., Koch, M., Fischer, G., & Weigel, R. (2025). A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology. In Proceedings of the Latin America Microwave Conference (LAMC 2025). San Juan.
BibTeX: Download - Breun, S., Schrotz, A.-M., Koch, M., Franchi, N., & Weigel, R. (2025). A 304 to 337 GHz Push-Push Frequency Doubler with 6.8 dBm Pmax using T-Junction Combining in 90 nm SiGe BiCMOS Technology. In Proceedings of the German Microwave Conference 2025.
BibTeX: Download - Engelmann, A., Probst, F., Hetterle, P., Scheller, K., Schrotz, A.-M., & Weigel, R. (2025). A D-Band 6.8 GHz Lock Range 5th Sub-Harmonic Injection-Locked Oscillator in 22 nm FDSOI. In 2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (pp. 39-41). San Juan, PR, US: Institute of Electrical and Electronics Engineers Inc..
DOI: 10.1109/SiRF63957.2025.11077076
BibTeX: Download - Isbilen, T., Breun, S., Arneth, N., Schrotz, A.-M., Scheller, K., Franchi, N., & Weigel, R. (2025). A 150-168 GHz Mixer and Quadrupler Unit in SiGe BiCMOS Technology for JCAS Applications Based on DDS Signal Generation Up to 5 GHz. In IEEE (Eds.), Proceedings of the 2025 IEEE Wireless and Microwave Technology Conference (WAMICON). Cocoa Beach, FL, USA, US.
DOI: 10.1109/WAMICON64429.2025.11004084
BibTeX: Download - Scheller, K., Engelmann, A., Hetterle, P., Weigel, R., Schrotz, A.-M., & Fischer, G. (2025). A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOI. In Proceedings of the IEEE MTT-S Latin America Microwave Conference (LAMC-2025). San Juan, PR: IEEE.
DOI: 10.1109/LAMC63321.2025.10880553
BibTeX: Download - Schrotz, A.-M. (2025). Integrierte Schaltungen und Systeme für Radaranwendungen im D- und J-Band (Dissertation).
BibTeX: Download - Schrotz, A.-M., Breun, S., Fischer, G., & Weigel, R. (2025). A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe Technology. In Proceedings of the IEEE MTT-S Latin America Microwave Conference (LAMC2025). San Juan, PR.
BibTeX: Download - Vilyuk, K., Scheller, K., Hetterle, P., Probst, F., Engelmann, A., Schrotz, A.-M.,... Weigel, R. (2025). A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS. In Proceedings of the International Microwave Symposium - IMS 2025 (pp. 974 - 977). San Francisco, US: IEEE.
DOI: 10.1109/IMS40360.2025.11103938
BibTeX: Download
- Breun, S., Schrotz, A.-M., Koch, M., Fischer, G., & Weigel, R. (2024). A 296-336 GHz 2 dBm Pmax Frequency Octupler Using Bootstrapped and Push-Push Topology in 90 nm SiGe BiCMOS Technology. In Proceedings of the 2024 Asia-Pacific Microwave Conference (APMC2024). Bali.
BibTeX: Download - Breun, S., Schrotz, A.-M., Koch, M., Issakov, V., & Weigel, R. (2024). A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology. In 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024. Clearwater, FL, US: Institute of Electrical and Electronics Engineers Inc..
DOI: 10.1109/WAMICON60123.2024.10522867
BibTeX: Download - Engelmann, A., Loose, M., Probst, F., Hetterle, P., Scheller, K., Weigel, R.,... Fischer, G. (2024). A mm-wave Active Power Splitter with Digital Gain Control in 22nm FDSOI. In Asia-Pacific Microwave Conference Proceedings, APMC (pp. 531-533). Bali, ID: Institute of Electrical and Electronics Engineers Inc..
DOI: 10.1109/APMC60911.2024.10867550
BibTeX: Download - Huang, T., Hetterle, P., Engelmann, A., Probst, F., Schrotz, A.-M., Weigel, R., & Fischer, G. (2024). A 1.7 dBm OP1dB D-Band Up-Conversion Mixer Utilizing Adaptive Back-Gate Bias in 22 nm FDSOI. In Proceedings of the 2024 Asia-Pacific Microwave Conference. Bali, ID.
BibTeX: Download - Scheller, K., Engelmann, A., Probst, F., Flohr, M., Weigel, R., Schrotz, A.-M., & Fischer, G. (2024). A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI. In Proceedings of the 2024 Asia-Pacific Microwave Conference. Bali, ID: IEEE.
DOI: 10.1109/APMC60911.2024.10867723
BibTeX: Download - Schrotz, A.-M., Breun, S., Schonharl, S., & Weigel, R. (2024). A Digitally Controlled D-Band Phase Shifter for FMCW Radar and RadCom in SiGe BiCMOS. In 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024. Clearwater, FL, US: Institute of Electrical and Electronics Engineers Inc..
DOI: 10.1109/WAMICON60123.2024.10522809
BibTeX: Download
- Breun, S., Schrotz, A.-M., Dietz, M., Issakov, V., & Weigel, R. (2022). A 295-337 GHz 2.5 dBm Psat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology. In Proceedings of the 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (pp. 66-69). Las Vegas.
DOI: 10.1109/SiRF53094.2022.9720049
BibTeX: Download - Dietz, M., Schrotz, A.-M., Weigel, R., Breun, S., & Issakov, V. (2022). A 268-325 GHz 5.2 dBm Psat Frequency Doubler using Transformer-Based Mode Separation in SiGe BiCMOS Technology.
DOI: 10.1109/BCICTS50416.2021.9682474
BibTeX: Download - Schrotz, A.-M., Breun, S., Issakov, V., Dietz, M., & Weigel, R. (2022). A 220-325 GHz Subharmonic Receiver with 14.8 dB Peak Conversion Gain for FMCW Radar in SiGe BiCMOS Technology. In Proceedings of the IEEE Radio & Wireless Week. Las Vegas.
DOI: 10.1109/sirf53094.2022.9720057
BibTeX: Download
- Breun, S., Schrotz, A.-M., Dietz, M., Issakov, V., & Weigel, R. (2021). A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology. In Proceedings of the IEEE Radio & Wireless Week. Virtual Conference.
DOI: 10.1109/sirf51851.2021.9383328
BibTeX: Download
- Breun, S., Völkel, M., Schrotz, A.-M., Dietz, M., Issakov, V., & Weigel, R. (2020). A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT. In Proceedings of the RWW 2020.
DOI: 10.1109/sirf46766.2020.9040174
BibTeX: Download - Carlowitz, C., Vossiek, M., Girg, T., Dietz, M., Schrotz, A.-M., Maiwald, T.,... Berroth, M. (2020). SPARS — Simultaneous Phase and Amplitude Regenerative Sampling. In Rolf Kraemer, Stefan Scholz (Eds.), Wireless 100 Gbps And Beyond. Architectures, Approaches and Findings of German Research Foundation (DFG) Priority Programme SPP1655. (pp. 37-74). Frankfurt/Oder: IHP GmbH, Im Technologiepark 25, Frankfurt (Oder).
BibTeX: Download - Maiwald, T., Schrotz, A.-M., Kolb, K., Potschka, J., Dietz, M., Hagelauer, A.M., & Weigel, R. (2020). A Technology Independent Synthesis Approach for Integrated mmWave Coupled Line Circuits. In Proceedings of the IEEE Radio and Wireless Symposium. San Antonio, Texas, US.
DOI: 10.1109/rws45077.2020.9050010
BibTeX: Download
- Schrotz, A.-M., Maiwald, T., Kolb, K., Breun, S., Dietz, M., Hagelauer, A.M., & Weigel, R. (2019). Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance. In Proceedings of the APMC (Asia-Pacific Microwave Conference). Singapur, SG.
DOI: 10.1109/APMC46564.2019.9038425
BibTeX: Download - Völkel, M., Schrotz, A.-M., Weigel, R., & Hagelauer, A.M. (2019). A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology. In Proceedings of the IEEE Radio and Wireless Symposium. Orlando, FL, US.
DOI: 10.1109/rws.2019.8714496
BibTeX: Download